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MMDT221K
NPN Silicon Epitaxial Planar Transistor
For digital circuits applications
SOT-23 Plastic Package
Collector (Output) Base (Input) R1 R2 Emitter (Common)
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW
O
C C
O
Resistance Values Type MMDT221K R1 (K) 10 R2 (K) 4.7
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/06/2006
MMDT221K
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 2 mA Collector Base Cutoff Current at VCB = 50 V Collector Emitter Cutoff Current at VCE = 50 V Emitter Base Cutoff Current at VEB = 6 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.3 mA Output Voltage Low Level at VCC = 5 V, VB = 3.5 V, RL = 1 K Output Voltage High Level at VCC = 5 V, VB = 0.5 V, RL = 1 K Transition Frequency at VCB = 10 V, -IE = 2 mA, f = 200 MHz Input Resistance Resistance Ratio Symbol hFE V(BR)CBO V(BR)CEO ICBO ICEO IEBO VCEsat VOL VOH fT R1 R1/R2 Min. 20 50 50 4.9 7 1.7 Typ. 150 10 Max. 100 500 1 0.25 0.2 13 2.6 Unit V V nA nA mA V V V MHz K -
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/06/2006

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